2N3507

2N3507

  • image of Single Bipolar Transistors>2N3507
  • image of Single Bipolar Transistors>2N3507
2N3507
Single Bipolar Transistors
Central Semiconductor
2N3507
-
Bulk


2N3507

Product parameters
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TYPEDESCRIPTION
MfrCentral Semiconductor
Series-
PackageBulk
Product StatusOBSOLETE
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 500mA, 1V
Frequency - Transition3MHz
Supplier Device PackageTO-39
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max1 W

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