71V35761S200BG

71V35761S200BG

  • image of Memory>71V35761S200BG
  • image of Memory>71V35761S200BG
71V35761S200BG
Memory
IDT, Integrated Device Technology Inc
IC SRAM 4.5MBIT
-
Tray
71V35761S200BGI8
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 119PBGA
71V35761S200BGG
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 119PBGA
71V35761S200BG8
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 119PBGA
71V35761S200BGI
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 119PBGA
71V35761S200BGGI8
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 119PBGA
71V35761S200BGGI
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 119PBGA
71V35761S200BGG8
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 119PBGA
71V35761S200BG
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 119PBGA
IDT71V35761S200BQI
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 165CABGA
IDT71V35761S200BQ8
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 165CABGA
IDT71V35761S200BQGI
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 165CABGA
IDT71V35761S200BQI8
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 165CABGA
IDT71V35761S200BQ
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 165CABGA
IDT71V35761S200BQG
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 165CABGA
IDT71V35761S200BQG8
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 165CABGA
IDT71V35761S200BQGI8
瑞萨-Renesas
IC SRAM 4.5M PARALLEL 165CABGA


IC SRAM 4.5MBIT PAR 119PBGA

Product parameters
PDF(1)
TYPEDESCRIPTION
MfrIDT, Integrated Device Technology Inc
Series-
PackageTray
Product StatusOBSOLETE
Package / Case119-BGA
Mounting TypeSurface Mount
Memory Size4.5Mbit
Memory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply3.135V ~ 3.465V
TechnologySRAM - Synchronous, SDR
Clock Frequency200 MHz
Memory FormatSRAM
Supplier Device Package119-PBGA (14x22)
Memory InterfaceParallel
Access Time3.1 ns
Memory Organization128K x 36
DigiKey ProgrammableNot Verified

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