: | NXH004P120M3F2PTNG |
---|---|
: | FET, MOSFET Arrays |
: | Sanyo Semiconductor/onsemi |
: | SILICON CARBIDE |
: | - |
: | Tray |
: | 1 |
TYPE | DESCRIPTION |
Mfr | Sanyo Semiconductor/onsemi |
Series | - |
Package | Tray |
Product Status | ACTIVE |
Package / Case | Module |
Mounting Type | Chassis Mount |
Configuration | 2 N-Channel (Half Bridge) |
Operating Temperature | -40°C ~ 175°C (TJ) |
Technology | Silicon Carbide (SiC) |
Power - Max | 1.1kW (Tj) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 338A (Tj) |
Input Capacitance (Ciss) (Max) @ Vds | 16410pF @ 800V |
Rds On (Max) @ Id, Vgs | 5.5mOhm @ 200A, 18V |
Gate Charge (Qg) (Max) @ Vgs | 876nC @ 20V |
Vgs(th) (Max) @ Id | 4.4V @ 120mA |
Supplier Device Package | 36-PIM (56.7x62.8) |