VS-1N3671A

VS-1N3671A

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VS-1N3671A
Single Diodes
Vishay General Semiconductor – Diodes Division
DIODE GEN PURP
-
Bulk
1
VS-1N3671RA
威世-Vishay
Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A
VS-1N3671A
威世-Vishay
Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A


DIODE GEN PURP 800V 12A DO203AA

Product parameters
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TYPEDESCRIPTION
MfrVishay General Semiconductor – Diodes Division
Series-
PackageBulk
Product StatusACTIVE
Package / CaseDO-203AA, DO-4, Stud
Mounting TypeChassis, Stud Mount
SpeedStandard Recovery >500ns, > 200mA (Io)
TechnologyStandard
Current - Average Rectified (Io)12A
Supplier Device PackageDO-203AA (DO-4)
Operating Temperature - Junction-65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max)800 V
Voltage - Forward (Vf) (Max) @ If1.35 V @ 12 A
Current - Reverse Leakage @ Vr800 µA @ 800 V

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