WNSC2D12650TJ

WNSC2D12650TJ

  • image of Single Diodes>WNSC2D12650TJ
  • image of Single Diodes>WNSC2D12650TJ
WNSC2D12650TJ
Single Diodes
WeEn Semiconductors Co., Ltd
DIODE SIL CARBI
-
Tape & Reel (TR)


DIODE SIL CARBIDE 650V 12A 5DFN

Product parameters
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TYPEDESCRIPTION
MfrWeEn Semiconductors Co., Ltd
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case4-VSFN Exposed Pad
Mounting TypeSurface Mount
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F380pF @ 1V, 1MHz
Current - Average Rectified (Io)12A
Supplier Device Package5-DFN (8x8)
Operating Temperature - Junction175°C
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 12 A
Current - Reverse Leakage @ Vr60 µA @ 650 V

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