XP65AN1K2IT
| ： | XP65AN1K2IT |
|---|---|
| ： | Single FETs, MOSFETs |
| ： | YAGEO XSEMI |
| ： | MOSFET N-CH 650 |
| ： | - |
| ： | Tube |
| ： | 1 |
| TYPE | DESCRIPTION |
| Mfr | YAGEO XSEMI |
| Series | XP65AN1K2 |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3.5A, 10V |
| Power Dissipation (Max) | 1.92W (Ta), 34.7W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220CFM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 44.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2048 pF @ 100 V |
